Infrared Emitters and Photodetectors with InAsSb Bulk Active Region

Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier h...

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Bibliographic Details
Main Authors: Wang, Ding, Lin, Youxi, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory, Svensson, Stefan P, Sarney, Wendy L, Hier, Harry
Format: Report
Language:English
Subjects:
ABSORPTION COEFFICIENTS
BARRIER DETECTORS
BUFFERS(CHEMISTRY)
DOPING
Electricity and Magnetism
ELECTROLUMINESCENCE
EMITTERS
GALLIUM ARSENIDES
HIGH RATE
HOLES(ELECTRON DEFICIENCIES)
INDIUM ARSENIDES
Infrared Detection and Detectors
INFRARED PHOTOCONDUCTORS
LONG WAVELENGTHS
LONG-WAVE INFRARED
METAMORPHIC GROWTH
MOLECULAR BEAM EPITAXY
Optics
PE611102A
PHOTODETECTORS
PHOTOLUMINESCENCE
Physical Chemistry
QUANTUM EFFICIENCY
Solid State Physics
SUBSTRATES
SUPERLATTICES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
TRANSPORT PROPERTIES
WAVEGUIDES
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Summary:Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T=80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness. Presented at SPIE Defense, Security + Sensing, 29 April 2013. Published in the Proceedings of SPIE, v8704 p870410-1/870410-10, 2013.