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Infrared Emitters and Photodetectors with InAsSb Bulk Active Region
Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier h...
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| creator | Wang, Ding Lin, Youxi Donetsky, Dmitry Kipshidze, Gela Shterengas, Leon Belenky, Gregory Svensson, Stefan P Sarney, Wendy L Hier, Harry |
| description | Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T=80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.
Presented at SPIE Defense, Security + Sensing, 29 April 2013. Published in the Proceedings of SPIE, v8704 p870410-1/870410-10, 2013. |
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Presented at SPIE Defense, Security + Sensing, 29 April 2013. Published in the Proceedings of SPIE, v8704 p870410-1/870410-10, 2013.</description><language>eng</language><subject>ABSORPTION COEFFICIENTS ; BARRIER DETECTORS ; BUFFERS(CHEMISTRY) ; DOPING ; Electricity and Magnetism ; ELECTROLUMINESCENCE ; EMITTERS ; GALLIUM ARSENIDES ; HIGH RATE ; HOLES(ELECTRON DEFICIENCIES) ; INDIUM ARSENIDES ; Infrared Detection and Detectors ; INFRARED PHOTOCONDUCTORS ; LONG WAVELENGTHS ; LONG-WAVE INFRARED ; METAMORPHIC GROWTH ; MOLECULAR BEAM EPITAXY ; Optics ; PE611102A ; PHOTODETECTORS ; PHOTOLUMINESCENCE ; Physical Chemistry ; QUANTUM EFFICIENCY ; Solid State Physics ; SUBSTRATES ; SUPERLATTICES ; THICKNESS ; TRANSMISSION ELECTRON MICROSCOPY ; TRANSPORT PROPERTIES ; WAVEGUIDES</subject><creationdate>2013</creationdate><rights>Approved for public release; distribution is unlimited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA626787$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang, Ding</creatorcontrib><creatorcontrib>Lin, Youxi</creatorcontrib><creatorcontrib>Donetsky, Dmitry</creatorcontrib><creatorcontrib>Kipshidze, Gela</creatorcontrib><creatorcontrib>Shterengas, Leon</creatorcontrib><creatorcontrib>Belenky, Gregory</creatorcontrib><creatorcontrib>Svensson, Stefan P</creatorcontrib><creatorcontrib>Sarney, Wendy L</creatorcontrib><creatorcontrib>Hier, Harry</creatorcontrib><creatorcontrib>STATE UNIV OF NEW YORK AT STONY BROOK</creatorcontrib><title>Infrared Emitters and Photodetectors with InAsSb Bulk Active Region</title><description>Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T=80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.
Presented at SPIE Defense, Security + Sensing, 29 April 2013. Published in the Proceedings of SPIE, v8704 p870410-1/870410-10, 2013.</description><subject>ABSORPTION COEFFICIENTS</subject><subject>BARRIER DETECTORS</subject><subject>BUFFERS(CHEMISTRY)</subject><subject>DOPING</subject><subject>Electricity and Magnetism</subject><subject>ELECTROLUMINESCENCE</subject><subject>EMITTERS</subject><subject>GALLIUM ARSENIDES</subject><subject>HIGH RATE</subject><subject>HOLES(ELECTRON DEFICIENCIES)</subject><subject>INDIUM ARSENIDES</subject><subject>Infrared Detection and Detectors</subject><subject>INFRARED PHOTOCONDUCTORS</subject><subject>LONG WAVELENGTHS</subject><subject>LONG-WAVE INFRARED</subject><subject>METAMORPHIC GROWTH</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Optics</subject><subject>PE611102A</subject><subject>PHOTODETECTORS</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physical Chemistry</subject><subject>QUANTUM EFFICIENCY</subject><subject>Solid State Physics</subject><subject>SUBSTRATES</subject><subject>SUPERLATTICES</subject><subject>THICKNESS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>TRANSPORT PROPERTIES</subject><subject>WAVEGUIDES</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>2013</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZHD2zEsrSixKTVFwzc0sKUktKlZIzEtRCMjIL8lPSS1JTS7JBwqVZ5ZkKHjmORYHJyk4leZkKzgml2SWpSoEpaZn5ufxMLCmJeYUp_JCaW4GGTfXEGcP3ZSSzOT44pLMvNSSeEcXRzMjM3MLc2MC0gBSxi8a</recordid><startdate>20130429</startdate><enddate>20130429</enddate><creator>Wang, Ding</creator><creator>Lin, Youxi</creator><creator>Donetsky, Dmitry</creator><creator>Kipshidze, Gela</creator><creator>Shterengas, Leon</creator><creator>Belenky, Gregory</creator><creator>Svensson, Stefan P</creator><creator>Sarney, Wendy L</creator><creator>Hier, Harry</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>20130429</creationdate><title>Infrared Emitters and Photodetectors with InAsSb Bulk Active Region</title><author>Wang, Ding ; Lin, Youxi ; Donetsky, Dmitry ; Kipshidze, Gela ; Shterengas, Leon ; Belenky, Gregory ; Svensson, Stefan P ; Sarney, Wendy L ; Hier, Harry</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA6267873</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ABSORPTION COEFFICIENTS</topic><topic>BARRIER DETECTORS</topic><topic>BUFFERS(CHEMISTRY)</topic><topic>DOPING</topic><topic>Electricity and Magnetism</topic><topic>ELECTROLUMINESCENCE</topic><topic>EMITTERS</topic><topic>GALLIUM ARSENIDES</topic><topic>HIGH RATE</topic><topic>HOLES(ELECTRON DEFICIENCIES)</topic><topic>INDIUM ARSENIDES</topic><topic>Infrared Detection and Detectors</topic><topic>INFRARED PHOTOCONDUCTORS</topic><topic>LONG WAVELENGTHS</topic><topic>LONG-WAVE INFRARED</topic><topic>METAMORPHIC GROWTH</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Optics</topic><topic>PE611102A</topic><topic>PHOTODETECTORS</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physical Chemistry</topic><topic>QUANTUM EFFICIENCY</topic><topic>Solid State Physics</topic><topic>SUBSTRATES</topic><topic>SUPERLATTICES</topic><topic>THICKNESS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>TRANSPORT PROPERTIES</topic><topic>WAVEGUIDES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Ding</creatorcontrib><creatorcontrib>Lin, Youxi</creatorcontrib><creatorcontrib>Donetsky, Dmitry</creatorcontrib><creatorcontrib>Kipshidze, Gela</creatorcontrib><creatorcontrib>Shterengas, Leon</creatorcontrib><creatorcontrib>Belenky, Gregory</creatorcontrib><creatorcontrib>Svensson, Stefan P</creatorcontrib><creatorcontrib>Sarney, Wendy L</creatorcontrib><creatorcontrib>Hier, Harry</creatorcontrib><creatorcontrib>STATE UNIV OF NEW YORK AT STONY BROOK</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Ding</au><au>Lin, Youxi</au><au>Donetsky, Dmitry</au><au>Kipshidze, Gela</au><au>Shterengas, Leon</au><au>Belenky, Gregory</au><au>Svensson, Stefan P</au><au>Sarney, Wendy L</au><au>Hier, Harry</au><aucorp>STATE UNIV OF NEW YORK AT STONY BROOK</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Infrared Emitters and Photodetectors with InAsSb Bulk Active Region</btitle><date>2013-04-29</date><risdate>2013</risdate><abstract>Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T=80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.
Presented at SPIE Defense, Security + Sensing, 29 April 2013. Published in the Proceedings of SPIE, v8704 p870410-1/870410-10, 2013.</abstract><oa>free_for_read</oa></addata></record> |
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| source | DTIC Technical Reports |
| subjects | ABSORPTION COEFFICIENTS BARRIER DETECTORS BUFFERS(CHEMISTRY) DOPING Electricity and Magnetism ELECTROLUMINESCENCE EMITTERS GALLIUM ARSENIDES HIGH RATE HOLES(ELECTRON DEFICIENCIES) INDIUM ARSENIDES Infrared Detection and Detectors INFRARED PHOTOCONDUCTORS LONG WAVELENGTHS LONG-WAVE INFRARED METAMORPHIC GROWTH MOLECULAR BEAM EPITAXY Optics PE611102A PHOTODETECTORS PHOTOLUMINESCENCE Physical Chemistry QUANTUM EFFICIENCY Solid State Physics SUBSTRATES SUPERLATTICES THICKNESS TRANSMISSION ELECTRON MICROSCOPY TRANSPORT PROPERTIES WAVEGUIDES |
| title | Infrared Emitters and Photodetectors with InAsSb Bulk Active Region |
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