Evaluation of SiC GTOs for Pulse Power Switching

Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high...

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Bibliographic Details
Main Authors: Bayne, S B, Ibitayo, D
Format: Report
Language:English
Subjects:
CIRCUITS
Electrical and Electronic Equipment
ELECTROMAGNETIC PULSES
GTO(GATE TURN-OFF THYRISTOR)
PPS(PULSE POWER SYSTEM)
SILICON CARBIDES
SWITCHES
THYRISTORS
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Summary:Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2 microsecond pulses with a maximum switching current of 1.4 kA (94.6 kA/cm2) and a current rise time of 2.4 kA/ s. All the devices were switched until failure. The failure modes will be discussed. Presented at 2003 IEEE Pulsed Power Conference (14th), PPC-2003, in Dallas, TX on 15-18 Jun 2003 and published in proceedings of the same, p135-138; 0-7803-7915-2/03. See also ADM002371, 2013 IEEE Pulsed Power Conference, Digest of Technical Papers 1976-2013, and Abstracts of the 2013 IEEE International Conference on Plasma Science.