Contact Effects on Silicon Surface Flashover Studies

We studied the breakdown of n+nn+ silicon devices in vacuum and various dielectric fluids. The breakdown voltage exhibited a dependence on the abruptness of the high-low junction and on the dielectric constant of the surrounding dielectric liquid. See also ADM002371. 2013 IEEE Pulsed Power Conferenc...

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Bibliographic Details
Main Authors: Feuerstein, Robert, Senitzky, Benjamin
Format: Report
Language:English
Subjects:
BREAKDOWN(ELECTRONIC THRESHOLD)
DIELECTRIC FLUIDS
DIELECTRICS
ELECTRIC CONTACTS
Electrical and Electronic Equipment
Electricity and Magnetism
JUNCTIONS
OHMIC CONTACT DEVICES
SILICON
SILICON SURFACE FLASHOVER
VACUUM
VOLTAGE
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Summary:We studied the breakdown of n+nn+ silicon devices in vacuum and various dielectric fluids. The breakdown voltage exhibited a dependence on the abruptness of the high-low junction and on the dielectric constant of the surrounding dielectric liquid. See also ADM002371. 2013 IEEE Pulsed Power Conference, Digest of Technical Papers 1976-2013, and Abstracts of the 2013 IEEE International Conference on Plasma Science. Held in San Francisco, CA on 16-21 June 2013. U.S. Government or Federal Purpose Rights License. Sponsored in part by the Strategic Defense Initiative Organization, Innovative Science and Technology Office.