A Novel CMOS Photosensor With a Gate-Body Tied NMOSFET Structure

A novel CMOS photosensor with a gate-body tied NMOSFET structure realized in the triple well is presented. The photocurrent is amplified by the lateral and vertical BJT action, which results in two different output photocurrents, which can be used for different applications within a pixel. The later...

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Bibliographic Details
Main Authors: Kook, Youn-Jae, Jeong, Jae-Hun, Park, Young-June, Min, Hong-Shick
Format: Report
Language:English
Subjects:
COMPONENT REPORTS
DRAINAGE
ELECTRIC CURRENT
Electrical and Electronic Equipment
Electricity and Magnetism
FOREIGN REPORTS
GATE-BODY TIED NMOSFET
INTENSITY
KOREA
LATERAL BJT
LIGHT
LOW INTENSITY
LOW LIGHT LEVELS
OUTPUT
PHOTOELECTRICITY
PHOTOSENSITIVITY
PHOTOSENSOR
SENSITIVITY
TRIPLE WELL
VERTICAL BJT
VERTICAL ORIENTATION
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Summary:A novel CMOS photosensor with a gate-body tied NMOSFET structure realized in the triple well is presented. The photocurrent is amplified by the lateral and vertical BJT action, which results in two different output photocurrents, which can be used for different applications within a pixel. The lateral action results in the drain current with higher sensitivity at low light intensity. And the vertical action results in the collector current with uniform responsivity over wider range of the light intensity. The proposed photosensor is compatible with CMOS circuits. Proceedings of SPIE, v4082, 26-27 Jul 2000, p173-179. This article is from ADA398019 Optical Sensing, Imaging and Manipulation for Biological and Biomedical Applications Held in Taipei, Taiwan on 26-27 July 2000. Proceedings