Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation

A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic mat...

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Bibliographic Details
Main Authors: Li, Kewen K, Wang, Feiling, Zheng, Jianjun, Pondillo, Peter L
Format: Report
Language:English
Subjects:
BEAM STEERING
CHEMICALS
COMPONENT REPORT
Computer Systems
Electricity and Magnetism
ELECTROOPTICS
EXPERIMENTAL DATA
FABRICATION
FERROELECTRIC MATERIALS
HIGH VELOCITY
INTENSITY
INTERFEROMETERS
LASER BEAMS
LAYERS
LIGHT
LOW VOLTAGE
MATERIALS
MODULATION
OPTICAL STORAGE
PHASE MODULATION
PRECURSORS
REFLECTION
SAPPHIRE
SILICON
SIMULATION
SOLUTIONS(GENERAL)
SUBSTRATES
SWITCHING
THIN FILMS
THINNESS
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Description
Summary:A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic material deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators (SLM's) and laser beam steering devices. Design principles fabrication procedure and the preliminary performance of the devices are described. Proceedings of SPIE, v4081. Published by: SPIE-The International Society for Optical Engineering. This article is from ADA399082 Optical Storage and Optical Information Held in Taipei, Taiwan on 26-27 July 2000