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Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation
A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic mat...
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| creator | Li, Kewen K Wang, Feiling Zheng, Jianjun Pondillo, Peter L |
| description | A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic material deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators (SLM's) and laser beam steering devices. Design principles fabrication procedure and the preliminary performance of the devices are described.
Proceedings of SPIE, v4081. Published by: SPIE-The International Society for Optical Engineering. This article is from ADA399082 Optical Storage and Optical Information Held in Taipei, Taiwan on 26-27 July 2000 |
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Proceedings of SPIE, v4081. Published by: SPIE-The International Society for Optical Engineering. This article is from ADA399082 Optical Storage and Optical Information Held in Taipei, Taiwan on 26-27 July 2000</description><language>eng</language><subject>BEAM STEERING ; CHEMICALS ; COMPONENT REPORT ; Computer Systems ; Electricity and Magnetism ; ELECTROOPTICS ; EXPERIMENTAL DATA ; FABRICATION ; FERROELECTRIC MATERIALS ; HIGH VELOCITY ; INTENSITY ; INTERFEROMETERS ; LASER BEAMS ; LAYERS ; LIGHT ; LOW VOLTAGE ; MATERIALS ; MODULATION ; OPTICAL STORAGE ; PHASE MODULATION ; PRECURSORS ; REFLECTION ; SAPPHIRE ; SILICON ; SIMULATION ; SOLUTIONS(GENERAL) ; SUBSTRATES ; SWITCHING ; THIN FILMS ; THINNESS</subject><creationdate>2000</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27565,27566</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADP011845$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Li, Kewen K</creatorcontrib><creatorcontrib>Wang, Feiling</creatorcontrib><creatorcontrib>Zheng, Jianjun</creatorcontrib><creatorcontrib>Pondillo, Peter L</creatorcontrib><creatorcontrib>NZ APPLIED TECHNOLOGIES WOBURN MA</creatorcontrib><title>Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation</title><description>A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic material deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators (SLM's) and laser beam steering devices. Design principles fabrication procedure and the preliminary performance of the devices are described.
Proceedings of SPIE, v4081. Published by: SPIE-The International Society for Optical Engineering. This article is from ADA399082 Optical Storage and Optical Information Held in Taipei, Taiwan on 26-27 July 2000</description><subject>BEAM STEERING</subject><subject>CHEMICALS</subject><subject>COMPONENT REPORT</subject><subject>Computer Systems</subject><subject>Electricity and Magnetism</subject><subject>ELECTROOPTICS</subject><subject>EXPERIMENTAL DATA</subject><subject>FABRICATION</subject><subject>FERROELECTRIC MATERIALS</subject><subject>HIGH VELOCITY</subject><subject>INTENSITY</subject><subject>INTERFEROMETERS</subject><subject>LASER BEAMS</subject><subject>LAYERS</subject><subject>LIGHT</subject><subject>LOW VOLTAGE</subject><subject>MATERIALS</subject><subject>MODULATION</subject><subject>OPTICAL STORAGE</subject><subject>PHASE MODULATION</subject><subject>PRECURSORS</subject><subject>REFLECTION</subject><subject>SAPPHIRE</subject><subject>SILICON</subject><subject>SIMULATION</subject><subject>SOLUTIONS(GENERAL)</subject><subject>SUBSTRATES</subject><subject>SWITCHING</subject><subject>THIN FILMS</subject><subject>THINNESS</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>2000</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZIh2S0wqykxOLMnMz1NIzEtRcM5ILEpMLkktyqyCCOanKYRkZOYpuKUWFeWn5qQmlwDVK3jmAZWkpRbl56YCGcUKaflFCj6Z6RklCr75KaU5YK08DKxpiTnFqbxQmptBxs01xNlDN6UkMzm-uCQzL7Uk3tElwMDQ0MLE1JiANABFczkM</recordid><startdate>200001</startdate><enddate>200001</enddate><creator>Li, Kewen K</creator><creator>Wang, Feiling</creator><creator>Zheng, Jianjun</creator><creator>Pondillo, Peter L</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>200001</creationdate><title>Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation</title><author>Li, Kewen K ; Wang, Feiling ; Zheng, Jianjun ; Pondillo, Peter L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADP0118453</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BEAM STEERING</topic><topic>CHEMICALS</topic><topic>COMPONENT REPORT</topic><topic>Computer Systems</topic><topic>Electricity and Magnetism</topic><topic>ELECTROOPTICS</topic><topic>EXPERIMENTAL DATA</topic><topic>FABRICATION</topic><topic>FERROELECTRIC MATERIALS</topic><topic>HIGH VELOCITY</topic><topic>INTENSITY</topic><topic>INTERFEROMETERS</topic><topic>LASER BEAMS</topic><topic>LAYERS</topic><topic>LIGHT</topic><topic>LOW VOLTAGE</topic><topic>MATERIALS</topic><topic>MODULATION</topic><topic>OPTICAL STORAGE</topic><topic>PHASE MODULATION</topic><topic>PRECURSORS</topic><topic>REFLECTION</topic><topic>SAPPHIRE</topic><topic>SILICON</topic><topic>SIMULATION</topic><topic>SOLUTIONS(GENERAL)</topic><topic>SUBSTRATES</topic><topic>SWITCHING</topic><topic>THIN FILMS</topic><topic>THINNESS</topic><toplevel>online_resources</toplevel><creatorcontrib>Li, Kewen K</creatorcontrib><creatorcontrib>Wang, Feiling</creatorcontrib><creatorcontrib>Zheng, Jianjun</creatorcontrib><creatorcontrib>Pondillo, Peter L</creatorcontrib><creatorcontrib>NZ APPLIED TECHNOLOGIES WOBURN MA</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Kewen K</au><au>Wang, Feiling</au><au>Zheng, Jianjun</au><au>Pondillo, Peter L</au><aucorp>NZ APPLIED TECHNOLOGIES WOBURN MA</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation</btitle><date>2000-01</date><risdate>2000</risdate><abstract>A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic material deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators (SLM's) and laser beam steering devices. Design principles fabrication procedure and the preliminary performance of the devices are described.
Proceedings of SPIE, v4081. Published by: SPIE-The International Society for Optical Engineering. This article is from ADA399082 Optical Storage and Optical Information Held in Taipei, Taiwan on 26-27 July 2000</abstract><oa>free_for_read</oa></addata></record> |
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| source | DTIC Technical Reports |
| subjects | BEAM STEERING CHEMICALS COMPONENT REPORT Computer Systems Electricity and Magnetism ELECTROOPTICS EXPERIMENTAL DATA FABRICATION FERROELECTRIC MATERIALS HIGH VELOCITY INTENSITY INTERFEROMETERS LASER BEAMS LAYERS LIGHT LOW VOLTAGE MATERIALS MODULATION OPTICAL STORAGE PHASE MODULATION PRECURSORS REFLECTION SAPPHIRE SILICON SIMULATION SOLUTIONS(GENERAL) SUBSTRATES SWITCHING THIN FILMS THINNESS |
| title | Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation |
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