Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O(3) Thin Films on Pt/MgO

Mg-doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as...

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Bibliographic Details
Main Authors: Kalkur, T S, Yi, Woo-Chul, Philofsky, Elliott, Kammerdiner, Lee
Format: Report
Language:English
Subjects:
BARIUM CALCIUM TITANATE ZIRCONATE THIN FILM
BARIUM STRONTIUM TITANATES
BCTZ(BARIUM CALCIUM TITANATE ZIRCONATE)
CAPACITORS
COMPONENT REPORT
DECOMPOSITION
DIELECTRIC PROPERTIES
DISSIPATION FACTOR
DOPING
ELECTRICAL MEASUREMENT
Electricity and Magnetism
ELECTRODES
FERROELECTRIC MATERIALS
MAGNESIUM OXIDES
MICROWAVE EQUIPMENT
ORGANOMETALLIC COMPOUNDS
OXYGEN
Physical Chemistry
PLATINUM
Radiofrequency Wave Propagation
ROOM TEMPERATURE
SUBSTRATES
SYMPOSIA
THIN FILMS
TUNING
X RAY DIFFRACTION
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Summary:Mg-doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 deg C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm. This article is from the Materials Research Society symposium proceedings, v720 p169-174, 2002. Prepared in cooperation with Pennsylvania State Univ. University Park, PA; Univ. of Pittsburgh, Pittsburgh, PA; Applied Ceramics Research Co. Colorado Springs, CO. This article is from ADA410712 Materials Research Society Symposium Proceedings; Volume 720. Materials Issues for Tunable RF and Microwave Devices III Held in San Francisco, California on April 2-3, 2002