Electro-Thermal extraction of aragonite and its Photocatalytic, Supercapacitor, and resistive switching applications

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2025-03, Vol.313, Article 117916
• Main Authors: Karuppaiah, Chandrasekar, Azhakanantham, Dheebanathan, Arumugam, Gowdhaman, Nirmal, Kiran A., Khot, Atul C., Dongale, Tukaram D., Rajendran, Ramesh, Selvamani, Muthamizh, Kim, Tae Geun, Kesavan, Arul Varman
• Format: Article
• Language: English
• Subjects: Aragonite; CaCO3; Neuromorphic computing; Non-volatile memory; Photocatalytic; Resistive switching; Supercapacitor
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2024.117916

[Display omitted] •Aragonite was deposited by electro-thermal method and characterized.•Material properties and its photocatalysis, supercapacitor, memory resistor properties were studied.•Photocatalytic degradation efficiency of 96% for 80 mins was obtained for RhB.•Supercapacitor specific capacitance of 312.14 Fg−1 (1 Ag−1) and 98 Fg−1 (5 mV-1s−1) was obtained by GCD and CV respectively.•Resistive switching device showed cycle through 20,000 times and store data time of more than 3500 s. Efficient, non-toxic and low cost functional materials are highly wanted for technological applications. In this work, simple and low-cost methodology of extracting aragonite was demonstrates. Sample was water bath extracted and its structural, optical, and morphological properties were studied. After the confirmation of aragonite phase, extracted sample was tested for photocatalytic, supercapacitor, and resistive switching applications. Aragonite shows photocatalytic degradation of 96 % for Rhodamine B for the exposure time of 80 min. It exhibits photostability of 95.6 % after 3 cycles. Aragonite supercapacitor electrode shows specific capacitance of 312.14 (GCD) and 98 (CV) F/g at 1 Ag−1 and 5 mV−1s−1. Memory device of Ag/CaCO3/FTO exhibits bipolar resistive switching behavior within ± 1.5 V. Resistive switching device can cycle through 20,000 times and store data for more than 3500 s. It is also noted that resistive switching device is capable of mimicking bio-synaptic characteristics, including potentiation-depression, excitatory postsynaptic current, and paired-pulse facilitation.