Effects of surface treatment on static characteristics of In/Cd1−xZnxTe/In and In/Cd1−xMnxTe/In devices

Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd1−xZnxTe and Cd1−xMnxTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device’s performance both, static and dynamic. In this work, w...

Full description

Saved in:
Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2020-03, Vol.957, Article 163387
Main Authors: Brovko, A., Adelberg, A., Ruzin, A.
Format: Article
Language:English
Subjects:
AFM
CdMnTe
CdZnTe
CPD
I-V
XPS
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd1−xZnxTe and Cd1−xMnxTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device’s performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current–voltage dependence (I-V). We also compare this correlation between Cd1−xZnxTe and Cd1−xMnxTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2020.163387