Effects of induced strain on the Raman spectra of AlxGa1−xAs compounds

In this work we study the nuances of composition determination of AlxGa1−xAs alloys by Raman spectroscopy. We mainly focus on understanding the effect of induced strain on the frequency of the optical phonons, a possible source of the dispersion in the calibration curves found in the literature. We...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2022-10, Vol.643, Article 414145
Main Authors: Prado, A., Tosi, L., Gonzalez, M., Salazar Alarcon, L., Rozas, G., Anguiano, S., Perez-Morelo, D.J., Pastoriza, H.
Format: Article
Language:English
Subjects:
AlGaAs alloys
Raman spectroscopy
Uniaxial strain
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Summary:In this work we study the nuances of composition determination of AlxGa1−xAs alloys by Raman spectroscopy. We mainly focus on understanding the effect of induced strain on the frequency of the optical phonons, a possible source of the dispersion in the calibration curves found in the literature. We conclude that while GaAs-like and AlAs-like Raman peaks may show a wide dispersion across samples of the same composition, aluminum concentration can still be accurately determined via Raman spectroscopy, provided that the difference between the GaAs-like and AlAs-like longitudinal optical modes is used, regardless of residual strain present. •Effect of uniaxial stress on Raman spectra of AlxGa(1-x)As compounds was studied.•This is the first systematic study in AlxGa(1-x)As reported in the literature.•To overcome the variations in calibrations subtract position of GaAs and AlAs peaks.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2022.414145