Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n- Insulator

• Published in: Journal of communications technology & electronics 2018-03, Vol.63 (3), p.281
• Main Authors: Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Vasilev, V.V, Varavin, V.S, Dvoretsky, S.A, Mikhailov, N.N, Yakushev, M.V, Sidorov, G.Yu
• Format: Article
• Language: English
• Subjects: Aluminum compounds; Coatings
• ISSN: 1064-2269
• DOI: 10.1134/S106422691803021X

The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-[Hg.sub.1-x] [Cd.sub.x] Te (x = 0.22-0.23) with the [Al.sub.2][O.sub.3] insulating coating has been experimentally studied. It has been shown that the structures with a graded-gap layer are characterized by a deeper and wider capacitance dip in the low- frequency capacitance-voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with Si[O.sub.2]/[Si.sub.3][N.sub.4] are also characteristic of the MIS structures with the [Al.sub.2][O.sub.3] insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with Si[O.sub.2]/[Si.sub.3][N.sub.4] or [Al.sub.2][O.sub.3] are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis.