ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC

A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a...

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Bibliographic Details
Published in:Journal of engineering physics and thermophysics 2020-10, Vol.93 (4), p.1036
Main Authors: Zhuraev, Kh. N, Yusupov, A, Gulyamov, A.G, Khazhiev, M.U, Saidov, D. Sh, Adilov, N.B
Format: Article
Language:English
Subjects:
Activation energy
Analysis
Methods
Semiconductors
Silicon carbide
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Summary:A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-020-02205-5