ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC

A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a...

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Published in:Journal of engineering physics and thermophysics 2020-10, Vol.93 (4), p.1036
Main Authors: Zhuraev, Kh. N, Yusupov, A, Gulyamov, A.G, Khazhiev, M.U, Saidov, D. Sh, Adilov, N.B
Format: Article
Language:English
Subjects:
Activation energy
Analysis
Methods
Semiconductors
Silicon carbide
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container_issue 4
container_start_page 1036
container_title Journal of engineering physics and thermophysics
container_volume 93
creator Zhuraev, Kh. N
Yusupov, A
Gulyamov, A.G
Khazhiev, M.U
Saidov, D. Sh
Adilov, N.B
description A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.
doi_str_mv 10.1007/s10891-020-02205-5
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fullrecord <record><control><sourceid>gale</sourceid><recordid>TN_cdi_gale_incontextgauss_ISR_A681947466</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A681947466</galeid><sourcerecordid>A681947466</sourcerecordid><originalsourceid>FETCH-gale_incontextgauss_ISR_A6819474663</originalsourceid><addsrcrecordid>eNqVissKgkAYRocoyC4v0Mpti6l_xhkvS5nGdDOCTlErkTAxxIIx6vEz6AVafJzD4UNoRWBDALytIeAHBAOFYRQ45iNkEe452PfIaTw4uBQDoXyKZsbcACDwmWMhGgqdHEOdpMqWSmb7s51Gto6lLVK1OwgdKiG_6YFfmMU4b8QCTa5la6rlj3O0jqQWMa7Ltiqa7nLv-urd1-XTmCLJsyJ0fRIwj7mu88_3Azw0OYg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC</title><source>Springer Nature</source><creator>Zhuraev, Kh. N ; Yusupov, A ; Gulyamov, A.G ; Khazhiev, M.U ; Saidov, D. Sh ; Adilov, N.B</creator><creatorcontrib>Zhuraev, Kh. N ; Yusupov, A ; Gulyamov, A.G ; Khazhiev, M.U ; Saidov, D. Sh ; Adilov, N.B</creatorcontrib><description>A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.</description><identifier>ISSN: 1062-0125</identifier><identifier>EISSN: 1573-871X</identifier><identifier>DOI: 10.1007/s10891-020-02205-5</identifier><language>eng</language><publisher>Springer</publisher><subject>Activation energy ; Analysis ; Methods ; Semiconductors ; Silicon carbide</subject><ispartof>Journal of engineering physics and thermophysics, 2020-10, Vol.93 (4), p.1036</ispartof><rights>COPYRIGHT 2020 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Zhuraev, Kh. N</creatorcontrib><creatorcontrib>Yusupov, A</creatorcontrib><creatorcontrib>Gulyamov, A.G</creatorcontrib><creatorcontrib>Khazhiev, M.U</creatorcontrib><creatorcontrib>Saidov, D. Sh</creatorcontrib><creatorcontrib>Adilov, N.B</creatorcontrib><title>ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC</title><title>Journal of engineering physics and thermophysics</title><description>A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.</description><subject>Activation energy</subject><subject>Analysis</subject><subject>Methods</subject><subject>Semiconductors</subject><subject>Silicon carbide</subject><issn>1062-0125</issn><issn>1573-871X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqVissKgkAYRocoyC4v0Mpti6l_xhkvS5nGdDOCTlErkTAxxIIx6vEz6AVafJzD4UNoRWBDALytIeAHBAOFYRQ45iNkEe452PfIaTw4uBQDoXyKZsbcACDwmWMhGgqdHEOdpMqWSmb7s51Gto6lLVK1OwgdKiG_6YFfmMU4b8QCTa5la6rlj3O0jqQWMa7Ltiqa7nLv-urd1-XTmCLJsyJ0fRIwj7mu88_3Azw0OYg</recordid><startdate>20201016</startdate><enddate>20201016</enddate><creator>Zhuraev, Kh. N</creator><creator>Yusupov, A</creator><creator>Gulyamov, A.G</creator><creator>Khazhiev, M.U</creator><creator>Saidov, D. Sh</creator><creator>Adilov, N.B</creator><general>Springer</general><scope>ISR</scope></search><sort><creationdate>20201016</creationdate><title>ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC</title><author>Zhuraev, Kh. N ; Yusupov, A ; Gulyamov, A.G ; Khazhiev, M.U ; Saidov, D. Sh ; Adilov, N.B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_incontextgauss_ISR_A6819474663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Activation energy</topic><topic>Analysis</topic><topic>Methods</topic><topic>Semiconductors</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhuraev, Kh. N</creatorcontrib><creatorcontrib>Yusupov, A</creatorcontrib><creatorcontrib>Gulyamov, A.G</creatorcontrib><creatorcontrib>Khazhiev, M.U</creatorcontrib><creatorcontrib>Saidov, D. Sh</creatorcontrib><creatorcontrib>Adilov, N.B</creatorcontrib><collection>Gale In Context: Science</collection><jtitle>Journal of engineering physics and thermophysics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhuraev, Kh. N</au><au>Yusupov, A</au><au>Gulyamov, A.G</au><au>Khazhiev, M.U</au><au>Saidov, D. Sh</au><au>Adilov, N.B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC</atitle><jtitle>Journal of engineering physics and thermophysics</jtitle><date>2020-10-16</date><risdate>2020</risdate><volume>93</volume><issue>4</issue><spage>1036</spage><pages>1036-</pages><issn>1062-0125</issn><eissn>1573-871X</eissn><abstract>A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.</abstract><pub>Springer</pub><doi>10.1007/s10891-020-02205-5</doi><tpages>6</tpages></addata></record>
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ispartof Journal of engineering physics and thermophysics, 2020-10, Vol.93 (4), p.1036
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1573-871X
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subjects Activation energy
Analysis
Methods
Semiconductors
Silicon carbide
title ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T12%3A32%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=ACTIVATION%20ENERGY%20OF%20THE%20CONDUCTANCE%20OF%20p-w-4H-SiC&rft.jtitle=Journal%20of%20engineering%20physics%20and%20thermophysics&rft.au=Zhuraev,%20Kh.%20N&rft.date=2020-10-16&rft.volume=93&rft.issue=4&rft.spage=1036&rft.pages=1036-&rft.issn=1062-0125&rft.eissn=1573-871X&rft_id=info:doi/10.1007/s10891-020-02205-5&rft_dat=%3Cgale%3EA681947466%3C/gale%3E%3Cgrp_id%3Ecdi_FETCH-gale_incontextgauss_ISR_A6819474663%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A681947466&rfr_iscdi=true