Theoretical studies on transforming a GaN semiconductor into a photonic crystal under a periodic external magnetic field

In this study, the properties of light propagation for a GaN semiconductor when subjected to a periodic external magnetic field were calculated by means of a transfer matrix. The dielectric function which was modulated periodically by the periodic external magnetic field caused changes of photonic b...

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Bibliographic Details
Published in:Journal of materials science 2013-02, Vol.48 (3), p.1147
Main Authors: Dang, Suihu, Li, Chunxia, Han, Peide, Jia, Wei, Zhang, Zhuxia, Zhang, Hua, Liang, Jian, Jia, Husheng, Liu, Xuguang, Xu, Bingshe
Format: Article
Language:English
Subjects:
Electric waves
Electromagnetic radiation
Electromagnetic waves
Invisibility
Liquors
Magnetic fields
Semiconductor industry
Semiconductors
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Summary:In this study, the properties of light propagation for a GaN semiconductor when subjected to a periodic external magnetic field were calculated by means of a transfer matrix. The dielectric function which was modulated periodically by the periodic external magnetic field caused changes of photonic band gap (PBG). In the reflection spectra, photons can be localized in the narrow bands. The position and intensity of PBGs can be modulated by changing the periodic external magnetic field and angle of the incident electromagnetic wave. All of these results have shown that a semiconductor has functions similar to conventional photonic crystals subjected to periodic external magnetic field.
ISSN:0022-2461
1573-4803
DOI:10.1007/sl0853-012-6852-x