Properties of [Sb.sub.2][S.sub.3] and [S.sub.b2][Se.sub.3] thin films obtained by pulsed laser ablation

The properties of [Sb.sub.2][S.sub.3] and [Sb.sub.2][Se.sub.3] thin films of variable thickness deposited onto [Al.sub.2][O.sub.3], Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chamber with a...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-07, Vol.47 (7)
Main Authors: Virt, I.S, Rudyj, I.O, Kurilo, I.V, Lopatynskyi, I. Ye, Linnik, L.F, Tetyorkin, V.V, Poterad, P, Luka, G
Format: Article
Language:English
Subjects:
Analysis
Dielectric films
Thin films
Online Access:Get full text
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Summary:The properties of [Sb.sub.2][S.sub.3] and [Sb.sub.2][Se.sub.3] thin films of variable thickness deposited onto [Al.sub.2][O.sub.3], Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chamber with a residual pressure of [10.sup.-5] Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters. DOI: 10.1134/S1063782613070233
ISSN:1063-7826
DOI:10.1134/S1063782613070233