AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2013-08, Vol.47 (8), p.1079-1083
• Main Authors: Slipchenko, S. O., Podoskin, A. A., Vinokurov, D. A., Bondarev, A. D., Kapitonov, V. A., Pikhtin, N. A., Kop’ev, P. S., Tarasov, I. S.
• Format: Article
• Language: English
• Subjects: Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Semiconductor lasers; Waveguides
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782613080186

Approaches to the development of laser heterostructures with a broadened single-mode waveguide are studied theoretically and experimentally. It is shown that the use of n - and p -type emitters with different refractive-index values ensures lasing in the fundamental mode only, if the thickness of the waveguide layer is 2 μm. The studied semiconductor lasers fabricated using the developed heterostructure feature internal optical losses amounting to 0.6 cm −1 ; the divergence in the plane perpendicular to the p - n junction is 23°. In the continuous lasing mode at room temperature, a linear power-current characteristic is obtained at an output optical power as high as 7 W.