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Effect of copper content on optostructural, morphological and photoelectrochemical properties of Mo[Bi.sub.2-x][Cu.sub.x][Se.sub.4] thin films
In the present investigation we have reported a facile chemical route for the deposition of Mo[Bi.sub.2-x][Cu.sub.x][Se.sub.4] (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) thin films at room temperature by using a simple and self-organised arrested precipitation technique. The deposited samples were charac...
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Published in: | Journal of materials science 2013-10, Vol.48 (20) |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | In the present investigation we have reported a facile chemical route for the deposition of Mo[Bi.sub.2-x][Cu.sub.x][Se.sub.4] (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) thin films at room temperature by using a simple and self-organised arrested precipitation technique. The deposited samples were characterised for their structural, morphological, optical and photoelectrochemical properties. X-ray diffraction patterns revealed that, undoped Mo[Bi.sub.2][Se.sub.5] shows a rhombohedral crystal structure, while mixed rhombohedral and orthorhombic crystal structures were observed with shifting of diffraction peaks after copper doping. The scanning electron microscopy and transmission electron microscopy images revealed that the surface morphology was improved with copper content. Compositional analysis of all samples was carried out by using energy dispersive X-ray spectroscopy. The direct band gap energy of all the samples estimated from absorbance spectra varies from 1.26 to 1.60 eV. The photoelectrochemical properties of all samples were studied in [I.sup.-]/[I.sub.3.sup.-] redox electrolyte which demonstrated that the electrical conductivity was transformed from n-type to p-type after copper doping and photoelectrochemical response of p-type Mo[Bi.sub.2-x][Cu.sub.x][Se.sub.4] thin film electrode was improved with increasing copper content. The mechanism of change in the type of electrical conductivity and augmentation in photoelectrochemical response after copper doping are discussed. |
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ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1007/s10853-013-7550-z |