Domain structure of GaN/SiC-based materials for semiconductor lasers

The domain structure of GaN/SiC hexagonal semiconductor films has been studied using small-angle X-ray scattering in order to determine possible domain configurations in a GaN/SiC film that can influence the properties of the laser on its basis. Data on specific features of the samples, such as geom...

Full description

Saved in:
Bibliographic Details
Published in:Physics of the solid state 2013-10, Vol.55 (10), p.2150-2153
Main Authors: Boiko, M. E., Sharkov, M. D., Boiko, A. M., Nesterov, S. I., Konnikov, S. G.
Format: Article
Language:English
Subjects:
Analysis
Lasers
Physics
Physics and Astronomy
Proceedings of the Third All-Russian Symposium “Semiconductor Lasers: Physics and Technology”
Semiconductors
Solid State Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The domain structure of GaN/SiC hexagonal semiconductor films has been studied using small-angle X-ray scattering in order to determine possible domain configurations in a GaN/SiC film that can influence the properties of the laser on its basis. Data on specific features of the samples, such as geometrical properties of clusters and the distances in superstructures (layers, superlattices), respectively, have been obtained by the processing of the small-angle X-ray scattering spectra according to Porod’s and Bragg’s models. A model of regular network of domain walls in GaN/SiC film has been proposed. The hypothesis on the formation of filamentary structures near the film-substrate interface has been confirmed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783413100053