Loading…
Single-layer graphene oxide films on a silicon surface
A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single...
Saved in:
Published in: | Technical physics 2013-11, Vol.58 (11), p.1614-1618 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 μm can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date. |
---|---|
ISSN: | 1063-7842 1090-6525 |
DOI: | 10.1134/S1063784213110029 |