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Single-layer graphene oxide films on a silicon surface

A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single...

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Bibliographic Details
Published in:Technical physics 2013-11, Vol.58 (11), p.1614-1618
Main Authors: Aleksenskii, A. E., Brunkov, P. N., Dideikin, A. T., Kirilenko, D. A., Kudashova, Yu. V., Sakseev, D. A., Sevryuk, V. A., Shestakov, M. S.
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Language:English
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Summary:A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 μm can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784213110029