Optical-controlled domain wall resistance in magnetic nanojunctions

. Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time appro...

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Bibliographic Details
Published in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2010-08, Vol.76 (3), p.475-480
Main Authors: Majidi, R., Tehranchi, M. M., Phirouznia, A., Ghafoori Tabrizi, K.
Format: Article
Language:English
Subjects:
Analysis
Complex Systems
Condensed Matter Physics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Electrons
Exact sciences and technology
Ferromagnetism
Fluid- and Aerodynamics
Mesoscopic and Nanoscale Systems
Physics
Physics and Astronomy
Solid State Physics
Spin polarized transport
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Summary:. Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type magnetic domain wall is considered and the effect of the electron-photon interaction on the resistance is studied. The results indicate that polarization and wavelength of the photon play a significant role in the magnetoresistance. The resistance of the nanojunction decreases as the wavelength of the photon increases. It is also shown that the domain wall resistance decreases by increasing the Fermi energy.
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2010-00232-1