The effect of hard radiation on the electronic, optical, and recombination properties of the -As compounds and their solid solutions

The data of the experimental and theoretical investigations into the electronic, optical, and recombination properties of A1P, InP, GaP, AlAs, GaAs, and their solid solutions exposed to hard radiation are discussed. The influence of hard radiation on the properties of laser and light-emitting diode...

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Published in:Russian physics journal 2013-12, Vol.56 (8), p.890
Main Author: Brudnyi, V.N
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Epitaxy
Gallium arsenide
Light-emitting diodes
Nuclear radiation
Solid solutions
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description The data of the experimental and theoretical investigations into the electronic, optical, and recombination properties of A1P, InP, GaP, AlAs, GaAs, and their solid solutions exposed to hard radiation are discussed. The influence of hard radiation on the properties of laser and light-emitting diode (LED) structures based on these materials is analyzed. Keywords: A1P, InP, GaP, AlAs, GaAs, LED heterostructure, radiation defects, charge neutrality level, radiation degradation.
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subjects Chemical vapor deposition
Epitaxy
Gallium arsenide
Light-emitting diodes
Nuclear radiation
Solid solutions
title The effect of hard radiation on the electronic, optical, and recombination properties of the -As compounds and their solid solutions
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