Diagnostics of γ-irradiated Si-Si[O.sub.2] structures by the cathodoluminescence method

The specific features of application of the cathodoluminescence (CL) method for the diagnostics of Si-Si[O.sub.2] structures, related to the possibility of forming luminescence centers directly when recording CL spectra, are considered. The CL efficiency is shown by the example of the effect of y ir...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-12, Vol.47 (13), p.1711
Main Authors: Baraban, A.P, Dmitriev, V.A, Petrov, Yu. V, Timofeeva, K.A
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The specific features of application of the cathodoluminescence (CL) method for the diagnostics of Si-Si[O.sub.2] structures, related to the possibility of forming luminescence centers directly when recording CL spectra, are considered. The CL efficiency is shown by the example of the effect of y irradiation on the properties of Si-Si[O.sub.2]. A model of the breakup of Si-OH groups in the oxide layer as a result of y irradiation is proposed and confirmed by independent electrical measurements. Keywords: cathodoluminescence, the structure of Si-Si[O.sub.2], luminescence centers, y-irradiation, electrophysical measurements. DOI: 10.1134/S1063782613130022
ISSN:1063-7826
DOI:10.1134/S1063782613130022