The electrical characteristics of MBE n-[Hg.sub.1-x][Cd.sub.x]Te MIS structures with sharp inhomogeneities in composition

The effect of regions with periodic sharp 48-54 nm thick inhomogeneities in composition on the electro-physical characteristics of MIS structures based on graded-gap n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.29-0.31) grown by molecular-beam epitaxy is studied. It is found that major electro-physical and pho...

Full description

Saved in:
Bibliographic Details
Published in:Russian physics journal 2011-08, Vol.54 (3), p.263
Main Authors: Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Varavin, V.S, Dvoretskii, S.A, Mikhailov, N.N, Sidorov, Yu.G
Format: Article
Language:English
Subjects:
Electric properties
Epitaxy
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of regions with periodic sharp 48-54 nm thick inhomogeneities in composition on the electro-physical characteristics of MIS structures based on graded-gap n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.29-0.31) grown by molecular-beam epitaxy is studied. It is found that major electro-physical and photo-electrical characteristics are qualitatively similar for MIS structures based on n-[Hg.sub.1-x][Cd.sub.x]Te with sharp inhomogeneities in composition (barriers) and without "barriers". It is shown that the electrical characteristics are mostly affected by the "barrier regions" located close to the insulator--semiconductor interface. This effect is manifested in an increase of the effective dielectric thickness, which can be due to the fact that the regions of enhanced composition form potential barriers for electrons, and in a decrease in the relaxation time of non-equilibrium carriers due to recombination at the boundaries of the regions with sharp changes in composition. Keywords: MIS structure, mercury cadmium telluride, graded-gap layers, barrier regions.
ISSN:1064-8887