Electrical properties of electron-irradiated epitaxial n-GaN films

The effect of electron irradiation ( E  = 7, D  = 10 16 –10 18  cm –2 ) followed by heat treatment in the temperature range 100–1000°С on the electrical properties of undoped ( n  = 1⋅10 14 –1⋅10 16 сm –3 ), medium- (( n  = 1.2–2)⋅10 17 сm –3 ), and heavily silicon-doped ( n  = (2–3.5)⋅10 18 сm –3 )...

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Bibliographic Details
Published in:Russian physics journal 2012-06, Vol.55 (1), p.53-57
Main Authors: Brudnyi, V. N., Verevkin, S. S., Kolin, N. G., Korulin, A. V.
Format: Article
Language:English
Subjects:
Analysis
Chemical vapor deposition
Condensed Matter Physics
Electric properties
Electrons
Epitaxy
Gallium nitrate
Hadrons
Heavy Ions
Lasers
Liquors
Mathematical and Computational Physics
Nuclear Physics
Nuclear radiation
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Physics of Semiconductors and Dielectrics
Theoretical
Toy industry
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Summary:The effect of electron irradiation ( E  = 7, D  = 10 16 –10 18  cm –2 ) followed by heat treatment in the temperature range 100–1000°С on the electrical properties of undoped ( n  = 1⋅10 14 –1⋅10 16 сm –3 ), medium- (( n  = 1.2–2)⋅10 17 сm –3 ), and heavily silicon-doped ( n  = (2–3.5)⋅10 18 сm –3 ) epitaxial n -GaN films grown on the Al 2 O 3 (0001) substrates using MOCVD technology is discussed. Under electron irradiation, an increase in the specific resistivity of n -GaN and the pinning of the Fermi level in the limit position near E c – 0.9 eV is observed. Restoration of the initial properties of irradiated material is investigated in the temperature range 100–1000°С. A stage of a “reverse” annealing is revealed in the temperature range 300–400°C.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-012-9775-8