Spectroscopic ellipsometry study of porous silicon-tin oxide nanocomposite layers

The layer-by-layer distribution of components in a porous silicon-tin oxide nanocomposite produced by the following three methods is studied by spectroscopic ellipsometry: chemical vapor deposition, atomic layer deposition, and magnetron sputtering. It is shown that, in the nanocomposites fabricated...

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Bibliographic Details
Published in:Technical physics 2011-11, Vol.56 (11), p.1593-1598
Main Authors: Bolotov, V. V., Davletkil’deev, N. A., Korotenko, A. A., Roslikov, V. E., Sten’kin, Yu. A.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Classical and Continuum Physics
Nanotechnology
Physics
Physics and Astronomy
Silicon
Solid State
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Summary:The layer-by-layer distribution of components in a porous silicon-tin oxide nanocomposite produced by the following three methods is studied by spectroscopic ellipsometry: chemical vapor deposition, atomic layer deposition, and magnetron sputtering. It is shown that, in the nanocomposites fabricated by these methods, SnO x penetrates to a depth more than 400 nm and is nonuniformly distributed over the porous layer thickness. The nanocomposite prepared by magnetron sputtering followed by heat treatment has the maximum penetration depth and the maximum uniformity of layer-by-layer SnO x distribution.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784211110065