Self-consistent model of nanowire growth and crystal structure with regard to the adatom diffusion

A self-consistent model of growth and structure of semiconductor nanowires is proposed. The crystal phase of group III–V semiconductor nanowires is studied. The critical radius of the transition from the hexagonal wurtzite (WZ) structure to the cubic structure of zinc blende (ZB) type is calculated...

Full description

Saved in:
Bibliographic Details
Published in:Technical physics 2011-02, Vol.56 (2), p.311-315
Main Authors: Nazarenko, M. V., Sibirev, N. V., Dubrovskii, V. G.
Format: Article
Language:English
Subjects:
Analysis
Classical and Continuum Physics
Crystals
Epitaxy
Nanotechnology
Physics
Physics and Astronomy
Semiconductors
Short Communications
Structure
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A self-consistent model of growth and structure of semiconductor nanowires is proposed. The crystal phase of group III–V semiconductor nanowires is studied. The critical radius of the transition from the hexagonal wurtzite (WZ) structure to the cubic structure of zinc blende (ZB) type is calculated as a function of parameters of the system of materials and the gaseous medium supersaturation. The model presented here is applicable to both gas-phase and molecular beam epitaxies and allows one to calculate the probability of formation of the WZ and ZB phases under various deposition conditions.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784211020228