Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes [p.sup.+]/[n.sup.+]/n-Si:Er

The electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes (LEDs) [p.sup.+]/[n.sup.+]/n-Si:Er, emitting under reverse bias on the [p.sup.+]/[n.sup.+] junction in the breakdown regime, have been investigated. The room-temperature emission power at the wavele...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-11, Vol.44 (11), p.1486
Main Authors: Shmagin, V.B, Kuznetsov, V.P, Kudryavtsev, K.E, Obolensky, S.V, Kozlov, V.A, Krasil'nik, Z.F
Format: Article
Language:English
Subjects:
Comparative analysis
Light-emitting diodes
Rare earth metals
Silicon
Tunnels
Online Access:Get full text
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Summary:The electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes (LEDs) [p.sup.+]/[n.sup.+]/n-Si:Er, emitting under reverse bias on the [p.sup.+]/[n.sup.+] junction in the breakdown regime, have been investigated. The room-temperature emission power at the wavelength λ ≅ 1.5 µm (~5 µW), external quantum efficiency (~[10.sup.-5]), and excitation efficiency of erbium ions (~2 x [10.sup.-20] [cm.sup.2] s) have been determined. At the same excitation efficiency, tunnel transit-time LEDs exhibit higher emission power in comparison with [p.sup.+]/n-Si:Er diode structures. The experimental results are compared with the model predictions for these structures. The factors limiting the electroluminescence intensity and impact excitation efficiency for erbium ions in tunnel transit-time LEDs are discussed. DOI: 10.1134/S1063782610110217
ISSN:1063-7826
DOI:10.1134/S1063782610110217