Low-temperature current-voltage characteristics of 4H-SiC [p.sup.+]-p-[n.sup.+] diodes: effect of impurity breakdown in the p-type base

The effect of impurity breakdown on the low-temperature (77-300 K) current-voltage (I-V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial[p.sup.+]-p-[n.sup.+] 4H-SiC structures. A high ele...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-04, Vol.46 (4), p.532
Main Authors: Ivanov, P.A, Potapov, A.S, Samsonova, T.P
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Ionization
Silicon carbide
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Summary:The effect of impurity breakdown on the low-temperature (77-300 K) current-voltage (I-V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial[p.sup.+]-p-[n.sup.+] 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed "diode" portion of the I-V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state. DOI: 10.1134/S1063782612040112
ISSN:1063-7826
DOI:10.1134/S1063782612040112