Deposition of thin [Bi.sub.2][Te.sub.3] and [Sb.sub.2][Te.sub.3] films by pulsed laser ablation

[Bi.sub.2][Te.sub.3] and [Sb.sub.2][Te.sub.3] films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 x [10.sup.-5] Torr) on single crystal substrates of [Al.sub.2][O.sub.3] (0001), Ba[F.sub.2] (111), and fresh cleavages of KCl or NaCl (001) heated to 453-523 K. The films...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-04, Vol.44 (4), p.544
Main Authors: Virt, I.S, Shkumbatyuk, T.P, Kurilo, I.V, Rudyi, I.O, Lopatinskyi, T. Ye, Linnik, L.F, Tetyorkin, V.V, Phedorov, A.G
Format: Article
Language:English
Subjects:
Electric properties
Semiconductors
Toy industry
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Summary:[Bi.sub.2][Te.sub.3] and [Sb.sub.2][Te.sub.3] films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 x [10.sup.-5] Torr) on single crystal substrates of [Al.sub.2][O.sub.3] (0001), Ba[F.sub.2] (111), and fresh cleavages of KCl or NaCl (001) heated to 453-523 K. The films were 10-1500 nm thick. The structures of the bulk material of targets and films were studied by X-ray diffractometry and transmission high-energy electron diffraction, respectively. Electrical properties of the films were measured in the temperature range of 77-300 K. It is shown that the films possess semiconductor properties. Several activation portions are observed in the temperature dependences of resistivity; the energies of activation portions depend on the film thickness and crystallite size. DOI: 10.1134/S1063782610040238
ISSN:1063-7826
DOI:10.1134/S1063782610040238