Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

It has been shown that the use of submonolayer InAs insertions as an active region of AlGaAs vertical cavity surface emitting lasers make it possible to attain resonant frequencies as high as 17 GHz. In this case, single-mode devices with a smaller diameter of the current aperture make it possible t...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-05, Vol.45 (5), p.679-684
Main Authors: Nadtochiy, A. M., Blokhin, S. A., Mutig, A., Lott, J. A., Ledentsov, N. N., Karachinskiy, L. Ya, Maximov, M. V., Ustinov, V. M., Bimber, D.
Format: Article
Language:English
Subjects:
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
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Summary:It has been shown that the use of submonolayer InAs insertions as an active region of AlGaAs vertical cavity surface emitting lasers make it possible to attain resonant frequencies as high as 17 GHz. In this case, single-mode devices with a smaller diameter of the current aperture make it possible to attain higher frequencies at lower current densities than those of multimode devices with a larger aperture diameter. The maximum error-free data transmission rate in the direct modulation mode in NRZ format is 20 Gb/s and is limited by the parasitic cutoff frequency. The high resonant frequency suggests that further optimization of the device design, directed to decreasing the electrical capacitance and resistances, the data transmission rate in lasers based on submonolayer insertions can be increased to 40 Gb/s.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611050216