Possibilities of studying nanoobjects in porous silicon and silicon substrates irradiated with protons by positron annihilation spectroscopy

The chemical composition of the material at the annihilation sites (silicon atoms of the pore “wall”), the size of nanodefects, and their concentration in porous silicon and single-crystal silicon wafers irradiated by protons have been determined using the angular distribution of annihilation photon...

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Bibliographic Details
Published in:Physics of the solid state 2010-04, Vol.52 (4), p.700-705
Main Authors: Burcl, R., Grafutin, V. I., Ilyukhina, O. V., Myasishcheva, G. G., Prokop’ev, E. P., Timoshenkov, S. P., Funtikov, Yu. V.
Format: Article
Language:English
Subjects:
Defects and Impurity Centers
Dislocations
Nanotechnology
Physics
Physics and Astronomy
Physics of Strength
Protons
Silicon
Solid State Physics
Spectrum analysis
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Summary:The chemical composition of the material at the annihilation sites (silicon atoms of the pore “wall”), the size of nanodefects, and their concentration in porous silicon and single-crystal silicon wafers irradiated by protons have been determined using the angular distribution of annihilation photons.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783410040050