Role of intrinsic defects in splitting the energy spectra of charge carriers in [Ag.sub.2]Te

The energy gap and its temperature coefficient are calculated depending on the concentration of defects in silver telluride with a Te and Ag excess. On the basis of the obtained data, the correlation between the charge-carrier energy spectrum and the silver-telluride defectness is analyzed. It is es...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-07, Vol.46 (7), p.861
Main Authors: Jafarov, M.B, Aliev, F.F, Hasanova, R.A, Saddinova, A.A
Format: Article
Language:English
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Summary:The energy gap and its temperature coefficient are calculated depending on the concentration of defects in silver telluride with a Te and Ag excess. On the basis of the obtained data, the correlation between the charge-carrier energy spectrum and the silver-telluride defectness is analyzed. It is established that the correlation is a reflection of more general fundamental relations between the energy structure and the defect concentration in [Ag.sub.2]Te caused by ions and vacancies of silver atoms in the sublattice. DOI: 10.1134/S106378261207007X
ISSN:1063-7826
DOI:10.1134/S106378261207007X