Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-Si[O.sub.x]:H Er,O, by dc-magnetron deposition

The results of a comprehensive study of the conditions for growing a-Si[O.sub.x]:H (Er,O) films are presented. The effect of the composition of various erbium-containing targets (a-Si[O.sub.x]:H (Er,O), Er[O.sub.x], [Er.sub.2]Si[O.sub.5], [Er.sub.2][O.sub.3], and Er), substrate temperature, and anne...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-12, Vol.45 (12), p.1604
Main Authors: Undalov, Yu.K, Terukov, E.I, Gusev, O.B, Lebedev, V.M, Trapeznikova, I.N
Format: Article
Language:English
Subjects:
Photoluminescence
Rare earth metals
Silane
Silicon
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Summary:The results of a comprehensive study of the conditions for growing a-Si[O.sub.x]:H (Er,O) films are presented. The effect of the composition of various erbium-containing targets (a-Si[O.sub.x]:H (Er,O), Er[O.sub.x], [Er.sub.2]Si[O.sub.5], [Er.sub.2][O.sub.3], and Er), substrate temperature, and annealing temperatures in argon, air, and under conditions of Si[H.sub.4] + Ar + [O.sub.2] plasma glow is studied. In order to obtain a-Si[O.sub.x]:H (Er,O) films with the highest photoluminescence intensity of erbium ions, it is recommended for the following technological conditions to be used: the substrate holder should be insulated from dc-magnetron electrodes and the working gas mixture should include silane, argon, and oxygen. Single-crystal silicon and metal erbium should be used as targets. The erbium target should be placed only in the Si-target erosion zone. DOI: 10.1134/S1063782611120141
ISSN:1063-7826
DOI:10.1134/S1063782611120141