A complex study of structural imperfections of the CdTe and CdTe: Cl crystals grown by the sublimation method

The structure of CdTe and CdTe: Cl crystals grown by the modified physical vapor transport method has been investigated using selective chemical etching, electron diffraction, and X-ray diffractometry. It has been established that the structural perfection is improved in the growth direction and fro...

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Bibliographic Details
Published in:Physics of the solid state 2010-12, Vol.52 (12), p.2472-2478
Main Authors: Popovych, V. D., Kurylo, I. V., Rudyi, I. O., Sizov, F. F., Shuptar, D. D.
Format: Article
Language:English
Subjects:
Physics
Physics and Astronomy
Semiconductors and Dielectrics
Solid State Physics
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Summary:The structure of CdTe and CdTe: Cl crystals grown by the modified physical vapor transport method has been investigated using selective chemical etching, electron diffraction, and X-ray diffractometry. It has been established that the structural perfection is improved in the growth direction and from the periphery of the radial cross section toward the center of the crystal. It has been shown that the thermomechanical stresses generated by the adhesion of the crystals to the walls of the growth ampoule are the main source of the formation of dislocations and the factor responsible for their nonuniform distribution over the volume of ingots.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378341012005X