Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014, Vol.48 (1), p.53-57
Main Authors: Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Usov, S. O., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Cherkashin, N. A., Tsatsulnikov, A. F.
Format: Article
Language:English
Subjects:
Epitaxy
Light-emitting diodes
Liquors
Magnetic Materials
Magnetism
Optoelectronics industry
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614010199