Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014, Vol.48 (1), p.53-57
Main Authors: Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Usov, S. O., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Cherkashin, N. A., Tsatsulnikov, A. F.
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Language:English
Subjects:
Epitaxy
Light-emitting diodes
Liquors
Magnetic Materials
Magnetism
Optoelectronics industry
Physics
Physics and Astronomy
Physics of Semiconductor Devices
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container_title Semiconductors (Woodbury, N.Y.)
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creator Lundin, W. V.
Nikolaev, A. E.
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Cherkashin, N. A.
Tsatsulnikov, A. F.
description III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.
doi_str_mv 10.1134/S1063782614010199
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subjects Epitaxy
Light-emitting diodes
Liquors
Magnetic Materials
Magnetism
Optoelectronics industry
Physics
Physics and Astronomy
Physics of Semiconductor Devices
title Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
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