Luminescence induced in diamond by [He.sup.+] ion implantation into SiC/C composites with an inverse opal structure

The photoluminescence induced in diamond by helium ion implantation into SiC/C nanocomposite samples and their structure revealed by high-resolution transmission electron microscopy have been investigated. It has been found that, apart from crystallites of silicon carbide, graphite, and amorphous ca...

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Bibliographic Details
Published in:Physics of the solid state 2012-03, Vol.54 (3), p.586
Main Authors: Tereshchenko, A.N, Zinenko, V.I, Khodos, I.I, Agafonov, Yu. A, Zhokhov, A.A, Masalov, V.M, Steinman, E.A, Emelchenko, G.A
Format: Article
Language:English
Subjects:
Composite materials industry
Nanotechnology
Photoluminescence
Silicon compounds
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Summary:The photoluminescence induced in diamond by helium ion implantation into SiC/C nanocomposite samples and their structure revealed by high-resolution transmission electron microscopy have been investigated. It has been found that, apart from crystallites of silicon carbide, graphite, and amorphous carbon, in the structure of the composites there are spherical carbon particles containing concentric graphite-like shells (onion-like particles). It has been established that onion-like particles are formed during high-temperature treatment of SiC/C nanocomposites in the course of their preparation. It has been shown that, after the implantation with the subsequent thermal treatment, nanocomposite samples exhibit a luminescence characteristic of N--V centers in diamonds. The assumption has been made that the diamond crystallites are formed at the center of onion-like particles during high-temperature treatment of the composite.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378341203033X