The influence of anodic oxide on the electron concentration in n-GaAs

The influence of anodic oxide on the electron concentration near the Ga 2 O 3 – n -GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in...

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Bibliographic Details
Published in:Russian physics journal 2014, Vol.56 (9), p.984-989
Main Authors: Kalygina, V. M., Vishnikina, V. V., Zarubin, А. N., Petrova, Yu. S., Skakunov, М. S., Тоlbanov, О. P., Тyazhev, А. V., Yaskevich, Т. М.
Format: Article
Language:English
Subjects:
Capacitors
Condensed Matter Physics
Electrons
Epitaxy
Gallium arsenide
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photoluminescence
Photonics
Physics
Physics and Astronomy
Theoretical
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Summary:The influence of anodic oxide on the electron concentration near the Ga 2 O 3 – n -GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in the electron concentration in a semiconductor after deposition of anodic oxide is accounted for by the appearance of Ga vacancies which act as acceptors in gallium arsenide.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-014-0129-6