Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures

Good epitaxial ZnCdS layers are grown on GaP semiconductor substrates by metal-organic chemical vapor deposition. The respective photodiode structures are fabricated by the metal-semiconductor-metal method, and their characteristics are studied. The diodes feature low dark currents. The bias depende...

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Bibliographic Details
Published in:Technical physics 2012-11, Vol.57 (11), p.1514-1518
Main Authors: Averin, S. V., Kuznetsov, P. I., Zhitov, V. A., Alkeev, N. V., Kotov, V. M., Zakharov, L. Yu, Gladysheva, N. B.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Classical and Continuum Physics
Detectors
Epitaxy
Physics
Physics and Astronomy
Semiconductors
Solid State Electronics
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Summary:Good epitaxial ZnCdS layers are grown on GaP semiconductor substrates by metal-organic chemical vapor deposition. The respective photodiode structures are fabricated by the metal-semiconductor-metal method, and their characteristics are studied. The diodes feature low dark currents. The bias dependence of the spectral response of the detector is determined. The long-wavelength edge of the ZnCdS/GaP diodes shifts from 355 to 440 nm as the bias voltage varies from 40 to 80 V. At the maximal photosensitivity wavelength (355 nm), the ampere/watt sensitivity of the detector is 0.1 A/W.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784212110047