Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quant...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-10, Vol.46 (10), p.1316-1320
Main Authors: Kabanov, V. V., Lebiadok, Ye. V., Ryabtsev, G. I., Smal, A. S., Shchemelev, M. A., Vinokurov, D. A., Slipchenko, S. O., Sokolova, Z. N., Tarasov, I. S.
Format: Article
Language:English
Subjects:
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Waveguides
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Summary:Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quantum efficiency of luminescence is no less than 91.5% for the laser samples studied.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612100077