Electrical Properties OF GaAs Doped with Iron

Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs valence b...

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Bibliographic Details
Published in:Russian physics journal 2014-04, Vol.56 (12), p.1435-1438
Main Authors: Khludkov, S. S., Prudaev, I. A., Novikov, V. A., Budnitskii, D. L., Lopatetskaya, K. S.
Format: Article
Language:English
Subjects:
Annealing
Condensed Matter Physics
Electric properties
Epitaxy
Gallium arsenide
Hadrons
Heavy Ions
Iron
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Theoretical
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Summary:Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs valence band. The position of the energy level of Fe and the electrical characteristics of GaAs:Fe are independent of the regime of the samples annealing at a temperature below the doping temperature.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-014-0196-8