Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the...

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Bibliographic Details
Published in:Russian physics journal 2014-04, Vol.56 (12), p.1439-1444
Main Authors: Sambonsuge, S., Nikitina, L. N., Hervieu, Yu. Yu, Suemitsu, M., Filimonov, S. N.
Format: Article
Language:English
Subjects:
Anisotropy
Condensed Matter Physics
Epitaxy
Hadrons
Heavy Ions
Hydrogen
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Silicon
Silicon carbide
Surface energy
Theoretical
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Summary:Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-014-0197-7