Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

A photosensitive structure with high room-temperature integrated sensitivity S int ≈ 700 A/lm (14500 A/W) is fabricated based on alloys of II–VI compounds n -CdS x Te 1 − x and p -Zn y Cd 1 − y Te. Its photoelectric properties are studied at various illumination levels and bias voltages. It is found...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-03, Vol.48 (3), p.354-359
Main Authors: Mirsagatov, Sh. A., Ataboev, O. K., Zaveryukhin, B. N., Nazarov, Zh. T.
Format: Article
Language:English
Subjects:
Alloys
Analysis
Magnetic Materials
Magnetism
Nuclear radiation
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A photosensitive structure with high room-temperature integrated sensitivity S int ≈ 700 A/lm (14500 A/W) is fabricated based on alloys of II–VI compounds n -CdS x Te 1 − x and p -Zn y Cd 1 − y Te. Its photoelectric properties are studied at various illumination levels and bias voltages. It is found that diffusion and drift flows of nonequilibrium carriers are directed oppositely at low illumination levels and forward bias voltages. This effect leads to inversion of the photocurrent sign, which makes it possible to fabricate selective photodetectors with injection properties on its basis.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614030178