p-GaSb(Ox)/n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

A new non-vacuum technology is proposed and anisotype photosensitive heterojunctions (native oxide of a narrow-gap III–V semiconductor)-(binary compound) p -GaSb(Ox)/ n -GaSb are fabricated for the first time. The developed technological process is based on the surface thermal interaction of a GaSb...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-04, Vol.48 (4), p.455-458
Main Authors: Rud’, V. Yu, Rud’, Yu. V., Terukov, E. I., Ushakova, T. N., Il’chuk, G. A.
Format: Article
Language:English
Subjects:
Gallium compounds
Interfaces
Magnetic Materials
Magnetism
Nuclear radiation
Physics
Physics and Astronomy
Semiconductors
Surfaces
Thin Films
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Summary:A new non-vacuum technology is proposed and anisotype photosensitive heterojunctions (native oxide of a narrow-gap III–V semiconductor)-(binary compound) p -GaSb(Ox)/ n -GaSb are fabricated for the first time. The developed technological process is based on the surface thermal interaction of a GaSb crystal with components of the normal Earth atmosphere. Based on original physical-technological studies of interaction in the GaSb/(air medium) system, it is found that p -GaSb(Ox) native-oxide films obtained in such a way exhibit high adhesion to the surface of the initial gallium antimonide n -GaSb. The steady-state current-voltage characteristics and spectral dependences of the relative photoconversion quantum efficiency of the obtained p -GaSb(Ox)/ n -GaSb heterojunctions are first measured. On this basis, the systematic features of charge transport and photosensitivity are discussed. A new possible application of the non-vacuum thermal oxidation of GaSb films in the development of optical radiation photodetectors on substrates of homogeneous gallium antimonide n -GaSb crystals is first detected and implemented.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261404023X