Study of GaInP solar-cell interfaces by variable-flux spectral measurements

The band structure and interface properties of solar cells based on GaInP/AlInP heterostructures are studied. The effect of band-structure variation at the interface between the p -AlInP wide-gap window and the p -GaInP emitter under the action of incident light is demonstrated. This effect results...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-04, Vol.48 (4), p.459-464
Main Authors: Morozov, I. A., Gudovskikh, A. S.
Format: Article
Language:English
Subjects:
Interfaces
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Surfaces
Thin Films
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Summary:The band structure and interface properties of solar cells based on GaInP/AlInP heterostructures are studied. The effect of band-structure variation at the interface between the p -AlInP wide-gap window and the p -GaInP emitter under the action of incident light is demonstrated. This effect results in the dependence of the spectral characteristics of GaInP solar cells on the irradiation intensity. A new procedure based on this effect is developed for estimating the minority carrier lifetime in the p -GaInP emitter layer and the density of surface states at the wide-gap window/emitter ( p -AlInP/ p -GaInP) interface. It is shown that the density of surface states at the p -AlInP/ p -GaInP interface is within the range 10 9 –10 11 cm −2 eV −1 .
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614040216