Loading…
Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation
The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si + ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of cry...
Saved in:
Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014-04, Vol.48 (4), p.517-520 |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si
+
ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed. |
---|---|
ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782614040265 |