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Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation

The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si + ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of cry...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-04, Vol.48 (4), p.517-520
Main Authors: Shemukhin, A. A., Balakshin, Y. V., Chernysh, V. S., Golubkov, S. A., Egorov, N. N., Sidorov, A. I.
Format: Article
Language:English
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Summary:The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si + ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614040265