Isotype surface-barrier n-TiN/n-Si heterostructure

n -TiN/ n -Si heterostructures are prepared by reactive magnetron sputtering. The current-voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed....

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-02, Vol.48 (2), p.219-223
Main Authors: Solovan, M. N., Brus, V. V., Maryanchuk, P. D.
Format: Article
Language:English
Subjects:
Analysis
Low-Dimensional Systems
Magnetic Materials
Magnetism
Nitrides
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
Solar energy
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Summary:n -TiN/ n -Si heterostructures are prepared by reactive magnetron sputtering. The current-voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed. The energy-band diagram for the heterojunctions under study is constructed. The concentration of heterojunction surface states is estimated to be 2.67 × 10 13 cm −2 . It is established that the dominant mechanisms of current transport through forward- and reverse-biased n -TiN/ n -Si heterojunctions are described well within the tunnel and emission models.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614020274