Nanoindentation of amorphous Ge-As-Se films

Changes in the nanohardness H and Young’s modulus E of Ge x As y Se 100 − x − y films have been studied as a function of the penetration depth of the Berkovich indenter. The values of H and E have been measured in the regime of harmonic modulation of a linearly increasing indenter load. It has been...

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Bibliographic Details
Published in:Physics of the solid state 2014-06, Vol.56 (6), p.1163-1167
Main Authors: Bilanych, V. S., Lofaj, F., Flachbart, K., Csach, K., Kuz’ma, V. V., Rizak, V. M.
Format: Article
Language:English
Subjects:
Mechanical Properties
Physics
Physics and Astronomy
Physics of Strength
Plasticity
Solid State Physics
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Summary:Changes in the nanohardness H and Young’s modulus E of Ge x As y Se 100 − x − y films have been studied as a function of the penetration depth of the Berkovich indenter. The values of H and E have been measured in the regime of harmonic modulation of a linearly increasing indenter load. It has been shown that the changes in E and H of the films under study during nanoindentation arise due to the peculiarities of their elastoplastic behavior, the formation of deformation zones near the nanocontact, and also size effects.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783414060067