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Raman scattering in the [Bi.sub.2][.sub.3] solid solution films

The [Bi.sub.2][([Te.sub.0.9][Se.sub.0.1]).sub.3] solid solutions thin films are produced by "hot wall" thermal evaporation in vacuum. From the data of X-ray diffraction studies, atomic-force microscopy of the surface relief, and Raman spectroscopy, it is established that vacuum thermal ann...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-09, Vol.46 (9), p.1140
Main Authors: Abdullaev, N.A, Abdullaev, N.M, Kerimova, A.M, Kahramanov, S.Sh, Bayramov, A.I, Miyamoto, H, Wakita, K, Mamedov, N.T, Nemov, S.A
Format: Article
Language:English
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Summary:The [Bi.sub.2][([Te.sub.0.9][Se.sub.0.1]).sub.3] solid solutions thin films are produced by "hot wall" thermal evaporation in vacuum. From the data of X-ray diffraction studies, atomic-force microscopy of the surface relief, and Raman spectroscopy, it is established that vacuum thermal annealing at a temperature of 200°C for 1 h substantially increases the degree of film crystallization. The laser radiation excitation power optimal for studies of the Raman spectra of the [Bi.sub.2][([Te.sub.0.9][Se.sub.0.1]).sub.3] films is determined. DOI: 10.1134/S1063782612090023
ISSN:1063-7826
DOI:10.1134/S1063782612090023